UniversityWafer supplies high-quality Neutron Transmutation Doped (NTD) silicon wafers manufactured from premium Float Zone (FZ) silicon for applications requiring exceptionally uniform electrical resistivity and high carrier lifetime. NTD silicon substrates are widely used in power semiconductors, radiation detectors, particle physics experiments, high-voltage devices, and advanced university research. We offer custom diameters, crystal orientations, resistivity ranges, thicknesses, and polished finishes to meet your exact research and production requirements.
UniversityWafer supplies high-quality Neutron Transmutation Doped (NTD) silicon wafers for universities, national laboratories, semiconductor manufacturers, and research institutions. Manufactured from premium Float Zone (FZ) silicon, NTD wafers provide exceptionally uniform phosphorus doping, excellent carrier lifetime, and highly consistent electrical resistivity across the entire wafer.
Our NTD silicon substrates are commonly used in power semiconductor devices, IGBTs, thyristors, radiation detectors, particle physics experiments, MEMS fabrication, high-voltage electronics, and advanced silicon wafer research.
High-Voltage Power Electronics Project
"Our research group is developing high-voltage power semiconductor devices and requires Float Zone NTD silicon wafers with extremely uniform resistivity, <100> orientation, double-side polishing, and a thickness of approximately 500 µm. Can you provide prototype quantities along with custom resistivity specifications for device characterization?"
Need additional processing? UniversityWafer also offers wafer processing, thin-film deposition, thermal oxidation, polishing, dicing, cleaning, and custom substrate preparation services.
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Neutron Transmutation Doped (NTD) silicon is high-purity Float Zone (FZ) silicon that has been exposed to a controlled neutron flux inside a nuclear reactor. During irradiation, a small percentage of silicon atoms are converted into phosphorus atoms, producing an extremely uniform n-type silicon wafer with precise electrical resistivity. Unlike conventional melt doping methods, neutron transmutation creates highly consistent dopant concentrations throughout the entire crystal, making NTD silicon the preferred substrate for demanding semiconductor applications.
The NTD process begins with ultra-high-purity Float Zone silicon. When the silicon crystal is irradiated with thermal neutrons, a portion of the naturally occurring silicon-30 isotope captures a neutron and eventually transforms into phosphorus. This produces exceptionally uniform n-type doping with minimal radial or axial resistivity variation.
| Process Step | Purpose |
|---|---|
| Float Zone Crystal Growth | Produces ultra-high purity single-crystal silicon. |
| Neutron Irradiation | Creates phosphorus atoms uniformly throughout the crystal. |
| Annealing | Repairs crystal defects created during irradiation. |
| Wafer Processing | Cutting, lapping, polishing, and cleaning for device fabrication. |
NTD silicon provides electrical uniformity that is difficult to achieve using conventional doping techniques. These characteristics make it an excellent material for high-power semiconductor devices and scientific instrumentation.
Because of its exceptional electrical uniformity, NTD silicon is widely used in high-performance semiconductor devices where precise electrical characteristics are critical.
| Application | Why NTD Silicon? |
|---|---|
| Power Semiconductors | Uniform resistivity improves device reliability and efficiency. |
| IGBTs | Supports high-current and high-voltage switching applications. |
| Thyristors | Provides stable electrical characteristics. |
| Radiation Detectors | High carrier lifetime improves detector sensitivity. |
| Particle Physics | Ideal for precision detector fabrication. |
| MEMS Devices | Suitable for specialized high-performance sensors. |
UniversityWafer supplies custom NTD silicon wafers manufactured to meet the exact requirements of research laboratories, universities, and semiconductor manufacturers.
| Specification | Available Options |
|---|---|
| Material | Float Zone (FZ) Silicon |
| Doping Type | N-Type (Phosphorus) |
| Crystal Orientation | <100>, <111>, <110> |
| Wafer Diameter | Custom research and production sizes |
| Thickness | Custom specifications available |
| Surface Finish | Single-side or double-side polished |
| Resistivity | Custom resistivity ranges |